Steady-state photoluminescent excitation characterization of semiconductor carrier recombination.

نویسندگان

  • J S Bhosale
  • J E Moore
  • X Wang
  • P Bermel
  • M S Lundstrom
چکیده

Photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efficient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Under the right conditions, this technique can also provide a contactless way to measure the external quantum efficiency of a solar cell.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Using the excitation-dependent radiative efficiency to assess asymmetry in the defect-related density of states

Measurements of steady-state radiative efficiency versus photoexcitation rate probe the carrier-density-dependent competition between nonradiative and radiative mechanisms in semiconductors. Nonradiative recombination through defect levels is proportional to the product of defect level occupation and carrier density in the opposing band. Band-to-band radiative recombination scales with the prod...

متن کامل

Positron lifetime spectroscopy with optical excitation : case study of natural diamond

In this paper we report positron lifetime results obtained under high-power steady-state and transient optical excitation. We present a model to analyse the results. The method has been applied to vacancy clusters in natural diamond, for which we self-consistently analyse optoelectronic constants such as optical absorption cross section and hole recombination cross section. The temperature depe...

متن کامل

Applications of the Quasi - Steady - State Photoconductance Technique

The main applications of photoconductance measurements of silicon wafers are the determination of implicit device voltages, bulk minority carrier lifetimes, emitter recombination currents and surface recombination velocities. These applications are illustrated with selected experiments. Multicrystalline and single crystal silicon wafers are used with different surface conditions. The practical ...

متن کامل

Cooperative recombination of a quantized high-density electron-hole plasma in semiconductor quantum wells.

We investigate photoluminescence from a high-density electron-hole plasma in semiconductor quantum wells created via intense femtosecond excitation in a strong perpendicular magnetic field, a fully quantized and tunable system. At a critical magnetic field strength and excitation fluence, we observe a clear transition in the band-edge photoluminescence from omnidirectional output to a randomly ...

متن کامل

The Response of Two-Degree of Freedom Self-Sustained Systems with Quadratic Nonlinearities to a Parametric Excitation (RESEARCH NOTE)

In this study the interaction between self-excited and paramet rically excited oscillations in two-degree-of-freedom systems with quadratic nonlinearities is investigated. The fundamental parametric resonance of the first mode and 3:1 internal resonance is considered, followed by 1:2 internal and parametric resonances of the second mode. The method of multiple time scales is applied to derive f...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • The Review of scientific instruments

دوره 87 1  شماره 

صفحات  -

تاریخ انتشار 2016